Staff high speed datapath and circuit design engineer, VLSI Design Engineering
Seoul, Seoul, Korea, republic of On-site
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About the role
The Memory Technology Group is at the core of the Legacy SanDisk Engineering Organization. We are building a cutting edge 3D memory in our multiple billion dollars Fab. Our memory provides performance, power, and endurance at a lower cost but on quality. The Memory Technology organization is a strategic entity for the company, and we are growing. Our group functions as a start-up within Sandisk, and offers a creative, fast paced, entrepreneurial work environment where you’ll be at the center of Sandisk innovation. If you thrive in a fast-paced, dynamic environment, are looking to be a part of a team that is developing exciting new processes, and you are eager to take on new opportunities and challenges with a sense of urgency and enthusiasm, then this could be an exciting opportunity for you.
What you'll bring
- Requires MS degree in Electrical Engineering or equivalent with 10 or more years of relevant experience.
- Knowledge and/or experience in data path design (Nand, DRAM or HBM)
- Knowledge in decoding concept and redundancy concept
- Knowledge and/or experience in Nand page buffer design
- Knowledge and/or experience in RTL design
- Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage
- Knowledge and/or experience in High speed I/O circuit is a big plus
- A strong device background and experience with evaluating new process technologies for use in design is preferred.